Datasheet > FFSP3065B

FFSP3065B

更新时间： 2024-01-31 04:59:11

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
6页	264K
描述
Silicon Carbide Schottky Diode 650V 30A TO220

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技术参数
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FFSP3065B 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	1.55
二极管类型：	RECTIFIER DIODE	Base Number Matches：	1

FFSP3065B 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

30 A, 650 V, D2, TO-220-2L

ELECTRICAL CONNECTION

FFSP3065B

1. Cathode

2. Anode

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

Features

TO−220−2LD

• Max Junction Temperature 175°C

• Avalanche Rated 144 mJ

CASE 340BB

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

MARKING DIAGRAM

• No Reverse Recovery / No Forward Recovery

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

FFSP

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuit

3065B

AYWWZZ

ABSOLUTE MAXIMUM RATINGS

FFSP3065B

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Assembly Lot Code

(T = 25°C, Unless otherwise specified)

Symbol

Parameter

Value

650

144

Unit

Peak Repetitive Reverse Voltage

Single Pulse Avalanche Energy (Note 1)

Continuous Rectified Forward Current

RRM

@ T < 135°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Non−Repetitive

Peak Forward

Surge Current

1100

1000

110

= 25°C, 10 ms

= 150°C, 10 ms

F, Max

Non−Repetitive

Forward

Surge Current

Half−Sine Pulse,

t = 8.3 ms

F, SM

tot

Power Dissipation

= 25°C

197

= 150°C

T , T

Operating and Storage Temperature

Range

−55 to +175

STG

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. E of 144 mJ is based on starting T = 25°C, L = 0.5 mH, I = 24 A, V = 50 V.

Publication Order Number:

January, 2023 − Rev. 1

FFSP3065B/D

12 3 4 5 6

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