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FFSP3065A PDF预览

FFSP3065A

更新时间: 2024-01-03 14:33:55
品牌 Logo 应用领域
安森美 - ONSEMI 局域网PC功效光电二极管肖特基二极管
页数 文件大小 规格书
6页 221K
描述
碳化硅肖特基二极管

FFSP3065A 技术参数

是否无铅:不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:10 weeks
风险等级:1.52Samacsys Confidence:3
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/1049580.4.1.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=1049580PCB Footprint:https://componentsearchengine.com/footprint.php?partID=1049580
3D View:https://componentsearchengine.com/viewer/3D.php?partID=1049580Samacsys PartID:1049580
Samacsys Image:https://componentsearchengine.com/Images/9/FFSP3065A.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/4/FFSP3065A.jpg
Samacsys Pin Count:2Samacsys Part Category:Diode
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:FFSP3065A-1
Samacsys Released Date:2018-01-24 13:36:15Is Samacsys:N
其他特性:HIGH RELIABILITY, PD-CASE应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON CARBIDE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.75 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大功率耗散:240 W
最大重复峰值反向电压:650 V最大反向电流:200 µA
表面贴装:NO技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

FFSP3065A 数据手册

 浏览型号FFSP3065A的Datasheet PDF文件第2页浏览型号FFSP3065A的Datasheet PDF文件第3页浏览型号FFSP3065A的Datasheet PDF文件第4页浏览型号FFSP3065A的Datasheet PDF文件第5页浏览型号FFSP3065A的Datasheet PDF文件第6页 
DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
Schottky Diode – EliteSiC,  
30 A, 650 V, D1, TO-220-2L  
FFSP3065A  
1. Cathode  
2. Anode  
Schottky Diode  
Description  
Silicon Carbide (SiC) Schottky Diodes use a completely new  
technology that provides superior switching performance and higher  
reliability compared to Silicon. No reverse recovery current,  
temperature independent switching characteristics, and excellent  
thermal performance sets Silicon Carbide as the next generation of  
power semiconductor. System benefits include highest efficiency,  
faster operating frequency, increased power density, reduced EMI, and  
reduced system size and cost.  
1
2
Features  
TO2202LD  
CASE 340BB  
Max Junction Temperature 175°C  
Avalanche Rated 180 mJ  
High Surge Current Capacity  
Positive Temperature Coefficient  
Ease of Paralleling  
MARKING DIAGRAM  
No Reverse Recovery/No Forward Recovery  
This Device is PbFree, Halogen Free/BFR Free and RoHS  
Compliant  
AXYYKK  
FFSP  
3065A  
Applications  
General Purpose  
SMPS, Solar Inverter, UPS  
Power Switching Circuits  
A
XYY  
KK  
= Assembly Plant Code  
= Date Code (Year & Week)  
= Lot Traceability Code  
FFSP3065A = Specific Device Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
February, 2023 Rev. 4  
FFSP3065A/D  

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