Datasheet > FFSP2065B-F085

FFSP2065B-F085

更新时间： 2024-01-16 20:33:49

品牌	Logo	应用领域
安森美 - ONSEMI		肖特基二极管
页数	文件大小	规格书
6页	259K
描述
汽车碳化硅 (SiC) 肖特基二极管，650 V

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FFSP2065B-F085 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	Factory Lead Time：	43 weeks 1 day
风险等级：	5.7	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

FFSP2065B-F085 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

20 A, 650 V, D2, TO-220-2L

ELECTRICAL CONNECTION

FFSP2065B-F085

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

1. Cathode

2. Anode

Features

• Max Junction Temperature 175°C

• Avalanche Rated 94 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

TO−220−2LD

CASE 340BB

• No Reverse Recovery / No Forward Recovery

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MARKING DIAGRAM

Applications

• Automotive HEV−EV Onboard Chargers

• Automotive HEV−EV DC−DC Converters

AXYYKK

FFSP

2065B

= Assembly Plant Code

XYY

FFSP2065B

= Date Code (Year & Week)

= Lot Traceability Code

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Publication Order Number:

February, 2023 − Rev. 2

FFSP2065B−F085/D

12 3 4 5 6

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