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FFSP0665B PDF预览

FFSP0665B

更新时间： 2024-10-30 11:14:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 262K
描述
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, TO-220-2L

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FFSP0665B 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
Schottky Diode – EliteSiC,  
6ꢀA, 650 V, D2, TO-220-2L  
ELECTRICAL CONNECTION  
FFSP0665B  
1. Cathode  
2. Anode  
Silicon Carbide (SiC) Schottky Diodes use a completely new  
technology that provides superior switching performance and higher  
reliability compared to Silicon. No reverse recovery current,  
temperature independent switching characteristics, and excellent  
thermal performance sets Silicon Carbide as the next generation of  
power semiconductor. System benefits include highest efficiency,  
faster operating frequency, increased power density, reduced EMI, and  
reduced system size and cost.  
1
2
Features  
TO−220−2LD  
CASE 340BB  
• Max Junction Temperature 175°C  
• Avalanche Rated 26 mJ  
• High Surge Current Capacity  
• Positive Temperature Coefficient  
• Ease of Paralleling  
MARKING DIAGRAM  
• No Reverse Recovery / No Forward Recovery  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
FFSP  
0665B  
AYWWZZ  
Applications  
• General Purpose  
• SMPS, Solar Inverter, UPS  
• Power Switching Circuit  
ABSOLUTE MAXIMUM RATINGS  
(T = 25°C, Unless otherwise specified)  
C
FFSP0665B  
A
YWW  
ZZ  
= Specific Device Code  
= Assembly Site  
= Date Code (Year & Week)  
= Lot Code  
Symbol  
Parameter  
Value  
650  
26  
Unit  
V
V
RRM  
Peak Repetitive Reverse Voltage  
Single Pulse Avalanche Energy (Note 1)  
Continuous Rectified Forward Current  
E
AS  
mJ  
A
I
F
6.0  
@ T < 150°C  
C
Continuous Rectified Forward Current  
8.0  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
@ T < 135°C  
C
I
Non−Repetitive  
Peak Forward  
Surge Current  
473  
408  
28  
A
A
T
T
= 25°C, 10 ms  
= 150°C, 10 ms  
F, Max  
C
C
I
Non−Repetitive  
Forward  
Surge Current  
Half−Sine Pulse,  
t = 8.3 ms  
F, SM  
p
P
tot  
Power Dissipation  
T
T
= 25°C  
49  
8.3  
W
C
= 150°C  
C
T , T  
Operating and Storage Temperature  
Range  
−55 to +175  
°C  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. E of 26 mJ is based on starting T = 25°C, L = 0.5 mH, I = 10.2 A, V = 50 V.  
AS  
J
AS  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
January, 2023 − Rev. 3  
FFSP0665B/D  
 
123456

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