Datasheet > FFSP0865A

FFSP0865A

更新时间： 2024-10-30 11:15:03

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
6页	212K
描述
SiC 二极管，650V，8A，TO-220-2

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FFSP0865A 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

8 A, 650 V, D1, TO-220-2L

1. Cathode

2. Anode

FFSP0865A

Description

Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size & cost.

Features

TO−220−2LD

CASE 340BB

• Max Junction Temperature 175°C

• Avalanche Rated 49 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

MARKING DIAGRAM

• No Reverse Recovery/No Forward Recovery

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

AXYYKK

FFSP

0865A

XYY

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Traceability Code

FFSP0865A = Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

February, 2023 − Rev. 3

FFSP0865A/D

12 3 4 5 6

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