Datasheet > FFSP0665A

FFSP0665A

更新时间： 2024-10-30 11:12:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	207K
描述
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D1, TO-220-2L

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FFSP0665A 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

6 A, 650 V, D1, TO-220-2L

1. Cathode

2. Anode

FFSP0665A

Schottky Diode

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

TO−220−2LD

CASE 340BB

Features

• Max Junction Temperature 175°C

• Avalanche Rated 36 mJ

MARKING DIAGRAM

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery/No Forward Recovery

• This Device is Pb−Free, Halogen Free/BFR Free and RoHS

AXYYKK

FFSP

0665A

Compliant

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

XYY

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Traceability Code

FFSP0665A = Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

February, 2023 − Rev. 3

FFSP0665A/D

12 3 4 5 6

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