是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 11 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2.5 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS6690A-NBNP006 | ONSEMI |
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单 N 沟道,逻辑电平,Power Trench® MOSFET,30V,11A,12.5 | |
FDS6690A-NBNPO06 | FAIRCHILD |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FDS6690AS | TI |
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Dual-Synchronous, Step-Down Controller with O | |
FDS6690AS | FAIRCHILD |
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30V N-Channel PowerTrench SyncFET | |
FDS6690AS | ONSEMI |
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N 沟道,PowerTrench® SyncFET™,30V,10A,12mΩ | |
FDS6690AS_08 | FAIRCHILD |
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30V N-Channel PowerTrench㈢ SyncFET⑩ | |
FDS6690AS_NL | FAIRCHILD |
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30V N-Channel PowerTrench SyncFET | |
FDS6690AS62Z | FAIRCHILD |
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暂无描述 | |
FDS6690S | FAIRCHILD |
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30V N-Channel PowerTrench SyncFET⑩ | |
FDS6690S | ROCHESTER |
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10000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOIC-8 |