Datasheet > FDS6690A-F095

FDS6690A-F095

更新时间： 2024-02-26 02:31:18

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	452K
描述
Transistor

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技术参数
数据手册

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FDS6690A-F095 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

FDS6690A-F095 数据手册

February 2007

FDS6690A

Single N-Channel, Logic-Level, PowerTrench^MOSFET

General Description

Features

This N-Channel Logic Level MOSFET is produced

• 11 A, 30 V.

R_DS(ON)= 12.5 mΩ @ V_GS= 10 V

R_DS(ON)= 17.0 mΩ @ V_GS= 4.5 V

using

Fairchild

Semiconductor’s

advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

superior switching performance.

• Fast switching speed

• Low gate charge

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

• High performance trench technology for extremely

low R_DS(ON)

• High power and current handling capability

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

±20

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

2.5

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

P_D

1.0

E_AS

Single Pulse Avalanche Energy

(Note 3)

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

(Note 1)

125

R_θJA

R_θJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6690A

13’’

12mm

2500 units

FDS6690A Rev E1 (W)

2007 Fairchild Semiconductor Corporation

12 3 4 5 6

中文翻译

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