Datasheet > FDS6676SD84Z

FDS6676SD84Z

更新时间： 2024-11-13 06:40:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	179K
描述
Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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FDS6676SD84Z 数据手册

February 2002

FDS6676S

30V N-Channel PowerTrench^SyncFET^™

General Description

Features

The FDS6676S is designed to replace a single SO-8

MOSFET and Schottky diode in synchronous DC:DC

power supplies. This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

R_DS(ON)and low gate charge. The FDS6676S includes

an integrated Schottky diode using Fairchild’s

monolithic SyncFET technology.

•

14.5 A, 30 V.

R_DS(ON)= 7.5 mΩ @ V_GS= 10 V

R_DS(ON)= 9.0 mΩ @ V_GS= 4.5 V

•

Includes SyncFET Schottky body diode

Low gate charge (43nC typical)

High performance trench technology for extremely low

R_DS(ON)and fast switching

Applications

•

High power and current handling capability

• DC/DC converter

• Motor drives

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

14.5

(Note 1a)

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

2.5

1.2

(Note 1c)

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6676S

13’’

12mm

2500 units

FDS6676S Rev D (W)

2002 Fairchild Semiconductor Corporation

12 3 4 5 6

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