Datasheet > FDMS7678

FDMS7678

更新时间： 2024-11-09 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
7页	295K
描述
N-Channel Power TrenchÂ® MOSFET 30 V, 26 A, 5.5 mÎ©

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FDMS7678 数据手册

April 2012

FDMS7678

N-Channel Power Trench^®MOSFET

30 V, 26 A, 5.5 mΩ

Features

General Description

Max r_DS(on)= 5.5 mΩ at V_GS= 10 V, I_D= 17.5 A

Max r_DS(on)= 6.8 mΩ at V_GS= 4.5 V, I_D= 15 A

High performance technology for extremely low r_DS(on)

Termination is Lead-free

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced Power Trench^®process that has

been especially tailored to minimize the on-state resistance. This

device is well suited for Power Management and load switching

applications common in Notebook Computers and Portable

Battery Packs.

RoHS Compliant

Applications

DC - DC Buck Converters

Notebook battery power management

Load switch in Notebook

Bottom

Top

Pin 1

Power 56

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

(Note 3)

±20

Drain Current -Continuous (Package limited) T_C= 25 °C

Drain Current -Continuous (Silicon limited)

-Continuous

_C= 25 °C

17.5

I_D

T_A= 25 °C

(Note 1a)

(Note 4)

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

2.3

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMS7678

Power 56

3000 units

FDMS7678 Rev. C1

www.fairchildsemi.com

12 3 4 5 6 7

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