FDMS7694

更新时间： 2024-09-25 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	274K
描述
N-Channel PowerTrenchÂ® MOSFET 30 V, 9.5 mÎ©

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数据手册

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FDMS7694 数据手册

July 2011

FDMS7694

N-Channel PowerTrench^®MOSFET

30 V, 9.5 mΩ

Features

General Description

Max r_DS(on)= 9.5 mΩ at V_GS= 10 V, I_D= 13.2 A

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency and to minimize switch node

ringing of DC/DC converters using either synchronous or

conventional switching PWM controllers.It has been optimized

for low gate charge, low r_DS(on), fast switching speed ang body

diode reverse recovery performance.

Max r_DS(on)= 14.5 mΩ at V_GS= 4.5 V, I_D= 10.5 A

Advanced Package and Silicon combination for low r_DS(on)

and high efficiency

Next generation enhanced body diode technology,

engineered for soft recovery

Applications

MSL1 robust package design

100% UIL tested

IMVP Vcore Switching for Notebook

VRM Vcore Switching for Desktop and server

OringFET / Load Switching

RoHS Compliant

DC-DC Conversion

Bottom

Top

Pin 1

Power 56

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

(Note 4)

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

I_D

T_A= 25 °C

(Note 1a)

(Note 3)

13.2

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

2.5

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

4.5

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMS7694

Power 56

3000 units

FDMS7694 Rev.C2

www.fairchildsemi.com

12 3 4 5 6 7

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