August 2011
FDMS7692
N-Channel PowerTrench® MOSFET
30 V, 7.5 mΩ
Features
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 13 A
Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 10 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered
for soft recovery.
Applications
MSL1 robust package design
100% UIL tested
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and Server
OringFET / Load Switch
RoHS Compliant
DC-DC Conversion
Top
Bottom
Pin 1
S
G
S
S
S
D
D
D
D
5
6
7
8
4
3
S
S
G
2
1
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
V
V
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
C = 25 °C
28
T
47
ID
A
TA = 25 °C
(Note 1a)
(Note 3)
(Note 1a)
14
-Pulsed
50
EAS
Single Pulse Avalanche Energy
Power Dissipation
21
27
mJ
W
TC = 25 °C
TA = 25 °C
PD
Power Dissipation
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
4.6
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS7692
FDMS7692
Power 56
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
www.fairchildsemi.com
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