Datasheet > FDFC3N108_05

FDFC3N108_05

更新时间： 2024-02-01 12:24:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		肖特基二极管
页数	文件大小	规格书
6页	100K
描述
N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode

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FDFC3N108_05 数据手册

April 2005

FDFC3N108

N-Channel 1.8V Specified PowerTrench^ÒMOSFET with Schottky Diode

General Description

Features

This N-Channel 1.8V specified MOSFET uses

Fairchild’s advanced low voltage PowerTrench process.

It is combined with a low forward drop Schottky that is

isolated from the MOSFET, providing a compact power

solution for battery power management and DC/DC

converter applications.

3 A, 20 V

R_DS(ON)= 70 mW @ V_GS= 4.5 V

R_DS(ON)= 95 mW @ V_GS= 2.5 V

Low gate charge

High performance trench technology for extremely

low R_DS(ON)

Applications

Battery management/Charger Application

DC/DC Conversion

SuperSOT^TM-6

Pin 1

SuperSOT™-6

MOSFET Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±12

I_D

(Note 1a)

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

(Note 1c)

0.96

0.90

0.70

T_J, T_stg

Operating and Storage Junction Temperature Range

°C

–55 to +150

Schottky Diode Maximum Ratings

V_RRM

Repetitive Peak reverse voltage

I_O

Average Forward Current

2.0

Thermal Characteristics

130

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

R_qJA

°C/W

Thermal Resistance, Junction-to-Case

R_qJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

8mm

Quantity

.108

FDFC3N108

7’’

3000 units

FDFC3N108 Rev C1 (W)

Ó2005 Fairchild Semiconductor Corporation

12 3 4 5 6

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