Datasheet > FDF5680

FDF5680

更新时间： 2024-09-28 22:31:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
16页	440K
描述
60V N-Channel PowerTrench⑩ MOSFET

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FDF5680 数据手册

July 2000

FDP5680/FDB5680

60V N-Channel PowerTrench MOSFET

General Description

Features

40 A, 60 V. R_DS(ON)= 0.020 Ω @ V_GS= 10 V

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters

using either synchronous or conventional switching PWM

controllers.

_DS(ON)= 0.023 Ω @ V_GS= 6 V.

Critical DC electrical parameters specified at evevated

temperature.

These MOSFETs feature faster switching and lower gate

charge than other MOSFETs with comparable R_DS(on)

specifications resulting in DC/DC power supply designs

with higher overall efficiency.

Rugged internal source-drain diode can eliminate the

need for an external Zener diode transient suppressor.

High performance trend technology for

extremely low R_DS(ON)

175°C maximum junction temperature rating.

TO-220

FDP Series

TO-263AB

FDB Series

Absolute Maximum Ratings T_C= 25°C unless otherwise noted

FDP5680

FDB5680

Symbol

Parameter

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

Maximum Drain Current - Continuous

- Pulsed

±20

120

P_D

Total Power Dissipation @ T_C= 25°C

Derate above 25°C

0.43

W/°C

°C

T_J, T_STG

Operating and Storage Junction Temperature Range

-65 to +175

Thermal Characteristics

R_θ_JC

Thermal Resistance, Junction-to-Case

2.3

°C/W

R_θ_JA

Thermal Resistance, Junction-to-Ambient

62.5

Package Marking and Ordering Information

Device Marking

Device

FDB5680

FDP5680

Reel Size

Tape Width

Quantity

800

FDB5680

13’’

24mm

N/A

FDP5680

Tube

2000 Fairchild Semiconductor International

FDP5680/FDB5680 Rev. C

12 3 4 5 6 7...16

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