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FDFC3N108 PDF预览

FDFC3N108

更新时间: 2024-02-26 01:44:25
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 肖特基二极管
页数 文件大小 规格书
7页 112K
描述
N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode

FDFC3N108 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SUPERSOT-6
针数:6Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.39
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:0.07 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.96 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDFC3N108 数据手册

 浏览型号FDFC3N108的Datasheet PDF文件第2页浏览型号FDFC3N108的Datasheet PDF文件第3页浏览型号FDFC3N108的Datasheet PDF文件第4页浏览型号FDFC3N108的Datasheet PDF文件第5页浏览型号FDFC3N108的Datasheet PDF文件第6页浏览型号FDFC3N108的Datasheet PDF文件第7页 
January 2004  
FDFC3N108  
N-Channel 1.8V Specified PowerTrenchÒ MOSFET with Schottky Diode  
General Description  
Features  
This N-Channel 1.8V specified MOSFET uses  
Fairchild’s advanced low voltage PowerTrench process.  
It is combined with a low forward drop Schottky that is  
isolated from the MOSFET, providing a compact power  
solution for battery power management and DC/DC  
converter applications.  
·
3 A, 20 V  
RDS(ON) = 70 mW @ VGS = 4.5 V  
RDS(ON) = 95 mW @ VGS = 2.5 V  
·
·
Low gate charge  
High performance trench technology for extremely  
low RDS(ON)  
Applications  
·
·
Battery management/Charger Application  
DC/DC Conversion  
1
2
3
6
5
4
Pin 1  
SuperSOT™-6  
MOSFET Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
20  
V
V
A
VGSS  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
±12  
3
ID  
(Note 1a)  
12  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
0.96  
0.90  
0.70  
W
TJ, Tstg  
Operating and Storage Junction Temperature Range  
°C  
55 to +150  
Schottky Diode Maximum Ratings  
VRRM  
Repetitive Peak reverse voltage  
20  
V
A
IO  
Average Forward Current  
2.0  
Thermal Characteristics  
130  
60  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
RqJA  
°C/W  
Thermal Resistance, Junction-to-Case  
RqJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
8mm  
Quantity  
.108  
FDFC3N108  
7’’  
3000 units  
FDFC3N108 Rev C (W)  
Ó2004 Fairchild Semiconductor Corporation  

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