Datasheet > FDFC2P100

FDFC2P100

更新时间： 2024-09-29 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		肖特基二极管
页数	文件大小	规格书
6页	358K
描述
Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm

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FDFC2P100 数据手册

October 2006

FDFC2P100

Integrated P-Channel PowerTrench MOSFET and Schottky Diode

-20V, -3A, 150mΩ

Features

General Description

Max r_DS(on)= 150mΩ at V_GS= -4.5V, I_D= -3.0A

Max r_DS(on)= 200mΩ at V_GS= -2.5V, I_D= -2.2A

Low Gate Charge (3.4nC typ)

The FDFC2P100 combine the exceptional performance of

Fairchild's PowerTrench MOSFET technology with a very low

forward voltage drop Schottky barrier rectifier in an SSOT-6

package.

Compact industry standard SuperSOT^TM-6 package

This device is designed specifically as a single package solution

for DC to DC converters. It features a fast switching, low gate

charge MOSFET with very low on-state resistance. Significant

improvement of Thermal Characteristics and Power Dissipation

via replacement of independently connected Schottky with

internal connection of Schottky Diode Cathode pn to P-Channel

PowerTrench MosFET Drain pin.

Schottky:

V_F< 0.45 V at I_F= 1A

RoHS Compliant

C/D

PIN 1

SuperSOT^TM-6

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

-20

±12

-3

(Note 1a)

I_D

-6

Power Dissipation

(Note 1a)

(Note 1b)

1.5

0.8

P_D

V_RRM

I_O

Schotty Repetitive Peak Reverse Voltage

Schotty Average Forward Current

(Note 1a)

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

°C/W

166

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

7”

Tape Width

8mm

Quantity

3000units

.100

FDFC2P100

SSOT-6

FDFC2P100 Rev.C (W)

www.fairchildsemi.com

12 3 4 5 6

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