Datasheet > FDC3512

FDC3512

更新时间： 2024-01-05 17:23:48

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
7页	270K
描述
N 沟道，PowerTrench® MOSFET，80V，3.0A，77mΩ

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FDC3512 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	SOT	包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.36
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	80 V
最大漏极电流 (Abs) (ID)：	3 A	最大漏极电流 (ID)：	3 A
最大漏源导通电阻：	0.077 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G6	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	6	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	1.6 W
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Matte Tin (Sn)
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FDC3512 数据手册

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

www.onsemi.com/support/sales

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与FDC3512相关器件

型号	品牌	获取价格	描述	数据表
FDC3512_F073	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDC3512_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-o
FDC3512D84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-o
FDC3512D87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-o
FDC3512-F095	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDC3512L99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-o
FDC3535	ONSEMI	获取价格	-80V P 沟道 PowerTrench® MOSFET
FDC3600	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.1A, 75V V(RRM),
FDC3601N	FAIRCHILD	获取价格	Dual N-Channel 100V Specified PowerTrench MOSFET
FDC3601N	ONSEMI	获取价格	双 N 沟道，100V 指定 PowerTrench® MOSFET，1.0A，500mΩ

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