Datasheet > FDB3502

FDB3502

更新时间： 2024-02-23 00:27:48

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
8页	394K
描述
75V N沟道PowerTrench® MOSFET

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FDB3502 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	S-PUFM-W4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.7	其他特性：	UL RECOGNIZED
最小击穿电压：	200 V	外壳连接：	ISOLATED
配置：	BRIDGE, 4 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	BRIDGE RECTIFIER DIODE	最大正向电压 (VF)：	1.3 V
JESD-30 代码：	S-PUFM-W4	最大非重复峰值正向电流：	400 A
元件数量：	4	相数：	1
端子数量：	4	最高工作温度：	125 °C
最大输出电流：	35 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE	封装形式：	FLANGE MOUNT
认证状态：	Not Qualified	最大重复峰值反向电压：	200 V
最大反向电流：	0.00001 µA	最大反向恢复时间：	0.2 µs
子类别：	Bridge Rectifier Diodes	表面贴装：	NO
端子形式：	WIRE	端子位置：	UPPER
Base Number Matches：	1

FDB3502 数据手册

Is Now Part of

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

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与FDB3502相关器件

型号	品牌	描述	获取价格	数据表
FDB3502P	DEC	35 AMP FAST RECOVERY BRIDGE RECTIFIERS	获取价格
FDB3504	DEC	35 AMP FAST RECOVERY BRIDGE RECTIFIERS	获取价格
FDB3504P	DEC	35 AMP FAST RECOVERY BRIDGE RECTIFIERS	获取价格
FDB3506	DEC	35 AMP FAST RECOVERY BRIDGE RECTIFIERS	获取价格
FDB3506P	DEC	35 AMP FAST RECOVERY BRIDGE RECTIFIERS	获取价格
FDB3508	DEC	35 AMP FAST RECOVERY BRIDGE RECTIFIERS	获取价格

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