Datasheet > FDB3632

FDB3632

更新时间： 2024-11-15 06:59:07

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关 PC
页数	文件大小	规格书
2页	53K
描述
N-Channel PowerTrench MOSFET

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中文翻译

获取价格

数据手册

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FDB3632 数据手册

SMD Type

MOSFET

N-Channel PowerTrench MOSFET

KDB3632^(FDB3632)

TO-263

Unit: mm

Features

rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A

Qg(tot) = 84nC (Typ.), VGS = 10V

Low Miller Charge

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Low QRR Body Diode

+0.1

-0.1

0.1max

1.27

UIS Capability (Single Pulse and Repetitive Pulse)

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

2 Drain

3 Source

+0.1

5.08

-0.1

+0.2

0.4

-0.2

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Symbol

V^DSS

Rating

100

Unit

V^GSS

Drain current-Continuous T^C111

T^A=25

Power dissipation

310

2.07

Derate above 25

Thermal Resistance Junction to Ambient

Thermal Resistance, Junction-to-Case

Channel temperature

RèJA

R^èJC

T^ch

0.48

175

Storage temperature

Tstg

-55 to +175

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与FDB3632相关器件

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FDB3632_12	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 100V, 80A, 9mÎ
FDB3632_F085	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 100V, 80A, 9mÎ
FDB3632_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Me
FDB3632_SB82115	FAIRCHILD	获取价格	暂无描述
FDB3632-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，100V，80A，9mΩ
FDB3652	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 100V, 61A, 16mз
FDB3652	ONSEMI	获取价格	N-Channel PowerTrench® MOSFET, 100V, 61A, 16m
FDB3652	TYSEMI	获取价格	rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V
FDB3652_08	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 100V, 61A, 16m
FDB3652_F085	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Met