FDB3860

更新时间： 2024-09-23 06:59:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	302K
描述
N-Channel PowerTrench® MOSFET 100 V, 30 A, 37 mΩ

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FDB3860 数据手册

March 2009

FDB3860

N-Channel PowerTrench^®MOSFET

100 V, 30 A, 37 mΩ

Features

General Description

Max r_DS(on)= 37 mΩ at V_GS= 10 V, I_D= 5.9 A

High performance trench technology for extremely low r_DS(on)

100% UIL tested

This N-Channel MOSFET is rugged gate version of Fairchild

Semiconductor‘s advanced Power Trench^®process. This part is

tailored for low r_DS(on)and low Qg figure of merit, with avalanche

ruggedness for a wide range of switching applications.

RoHS Compliant

Applications

DC-AC Conversion

Synchronous Rectifier

TO-263AB

FDB Series

MOSFET Maximum Ratings T_C= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

100

±20

Drain Current -Continuous (Silicon limited)

-Continuous

T_C= 25 °C

T_A= 25 °C

I_D

(Note 1a)

(Note 3)

(Note 1a)

6.4

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

3.1

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.75

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

330 mm

Tape Width

24 mm

Quantity

FDB3860

TO-263AB

800 units

FDB3860 Rev.C

www.fairchildsemi.com

12 3 4 5 6

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