Datasheet > FDB3632_SB82115

FDB3632_SB82115

更新时间： 2024-09-23 14:50:15

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飞兆/仙童 - FAIRCHILD		/
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数据手册

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FDB3632_SB82115 数据手册

December 2008

FDB3632 / FDP3632 / FDI3632 / FDH3632

N-Channel PowerTrench^®MOSFET

100V, 80A, 9mΩ

Features

Applications

•

r_DS(ON)= 7.5mΩ (Typ.), V_GS= 10V, I_D= 80A

Q_g(tot) = 84nC (Typ.), V_GS= 10V

Low Miller Charge

•

DC/DC converters and Off-Line UPS

Distributed Power Architectures and VRMs

Primary Switch for 24V and 48V Systems

High Voltage Synchronous Rectifier

Electronic Valve Train Systems

Low Q_RRBody Diode

UIS Capability (Single Pulse and Repetitive Pulse)

RoHS Compliant

DRAIN

(FLANGE)

DRAIN

(FLANGE)

DRAIN

(FLANGE)

TO-220AB

FDP SERIES

TO-263AB

FDB SERIES

TO-262AB

FDI SERIES

TO-247

FDH SERIESD

MOSFET Maximum Ratings ^T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

100

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Continuous (T_C< 111^oC, V_GS= 10V)

Continuous (T_amb= 25^oC, V_GS= 10V, R_θJA= 43^oC/W)

Pulsed

I_D

Figure 4

337

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25^oC

310

P_D

2.07

W/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 175

Thermal Characteristics

Thermal Resistance Junction to Case TO-220, TO-263, TO-262,

TO-247

R_θJC

0.48

^oC/W

R_θJA

Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)

Thermal Resistance Junction to Ambient TO-263, 1in²copper pad area

Thermal Resistance Junction to Ambient TO-247 (Note 2)

^oC/W

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C3

12 3 4 5 6 7...11

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