Datasheet > FDB3632-F085

FDB3632-F085

更新时间： 2024-11-16 11:16:03

品牌	Logo	应用领域
安森美 - ONSEMI		PC 开关晶体管
页数	文件大小	规格书
12页	1368K
描述
N 沟道，PowerTrench® MOSFET，100V，80A，9mΩ

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FDB3632-F085 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
风险等级：	1.31	Samacsys Confidence：	4
Samacsys Status：	Released	Samacsys PartID：	1032668
Samacsys Pin Count：	3	Samacsys Part Category：	MOSFET (N-Channel)
Samacsys Package Category：	Other	Samacsys Footprint Name：	D2PAK?3 (TO?263, 3?LEAD) CASE 418AJ ISSUE C
Samacsys Released Date：	2020-02-28 11:18:57	Is Samacsys：	N
雪崩能效等级（Eas）：	338 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	100 V
最大漏极电流 (Abs) (ID)：	12 A	最大漏极电流 (ID)：	12 A
最大漏源导通电阻：	0.009 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	310 W
参考标准：	AEC-Q101	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FDB3632-F085 数据手册

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与FDB3632-F085相关器件

型号	品牌	获取价格	描述	数据表
FDB3652	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 100V, 61A, 16mз
FDB3652	ONSEMI	获取价格	N-Channel PowerTrench® MOSFET, 100V, 61A, 16m
FDB3652	TYSEMI	获取价格	rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V
FDB3652_08	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 100V, 61A, 16m
FDB3652_F085	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
FDB3652_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
FDB3652-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，100V，61A，16mΩ
FDB3672	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET
FDB3672_09	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 100V, 44A, 28m
FDB3672_F085	FAIRCHILD	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.047ohm, 1-Element, N-Channel, Silicon, M

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