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FDB3652 PDF预览

FDB3652

更新时间： 2024-11-10 11:14:07
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
15页 765K
描述
N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ

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中文翻译

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FDB3652 技术参数

是否无铅： 不含铅生命周期：Not Recommended
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：7.38
雪崩能效等级（Eas）：182 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (ID)：9 A最大漏源导通电阻：0.016 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDB3652 数据手册

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中文翻译

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FDB3652 替代型号

型号 品牌 替代类型 描述 数据表
NVB6412ANT4G ONSEMI

类似代替

 Power MOSFET 100V, 58A, 18.2 mohm, Single N-Channel, D2PAK.
FQB70N08TM FAIRCHILD

功能相似

 FQB70N08 / FQI70N08 80V N-Channel MOSFET
FQB70N08 FAIRCHILD

功能相似

 80V N-Channel MOSFET

与FDB3652相关器件

型号 品牌 获取价格 描述 数据表
FDB3652_08 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 100V, 61A, 16m
FDB3652_F085 FAIRCHILD

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 		Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
FDB3652_NL FAIRCHILD

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 		Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
FDB3652-F085 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，100V，61A，16mΩ
FDB3672 FAIRCHILD

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 		N-Channel PowerTrench MOSFET
FDB3672_09 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 100V, 44A, 28m
FDB3672_F085 FAIRCHILD

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 		Power Field-Effect Transistor, 7.2A I(D), 100V, 0.047ohm, 1-Element, N-Channel, Silicon, M
FDB3672-F085 ONSEMI

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 		100 V、44 A、24 mΩ、D2PAKN 沟道 UltraFET® Trench
FDB3682 TYSEMI

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 		rDS(ON) =32m (Typ.), VGS = 10V, ID =32A Qg(tot) = 18.5nC (Typ.), VGS = 10V
FDB3682 KEXIN

获取价格

 		N-Channel PowerTrench MOSFET

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