Datasheet > FDB3632

FDB3632

更新时间： 2024-11-15 12:31:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关脉冲 PC
页数	文件大小	规格书
2页	221K
描述
rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A UIS Capability (Single Pulse and Repetitive Pulse)

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数据手册

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FDB3632 数据手册

SMD Type

Product specification

KDB3632^(FDB3632)

TO-263

Unit: mm

Features

r^DS(ON)= 7.5m (Typ.), V^GS= 10V, I^D= 80A

Q^g(tot)= 84nC (Typ.), V^GS= 10V

Low Miller Charge

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Low Q^RRBody Diode

+0.1

-0.1

0.1max

1.27

UIS Capability (Single Pulse and Repetitive Pulse)

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

2 Drain

3 Source

+0.1

5.08

-0.1

+0.2

0.4

-0.2

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Symbol

V^DSS

Rating

100

Unit

V^GSS

Drain current-Continuous T^C111

T^A=25

I^D

Power dissipation

310

2.07

P^D

Derate above 25

Thermal Resistance Junction to Ambient

Thermal Resistance, Junction-to-Case

Channel temperature

R^èJA

R^èJC

T^ch

0.48

175

Storage temperature

T^stg

-55 to +175

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