FDB110N15A

更新时间： 2024-11-14 12:27:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	242K
描述
N-Channel PowerTrenchÂ® MOSFET 150 V, 92 A, 11 mÎ©

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FDB110N15A 数据手册

March 2013

FDB110N15A

N-Channel PowerTrench MOSFET

150 V, 92 A, 11 mΩ

Features

Description

•

R_DS(on)= 9.25 mΩ ( Typ.) @ V_GS= 10 V, I_D= 92 A

This N-Channel MOSFET is produced using Fairchild

Semiconductor^®’s advance PowerTrench^®process that has

been tailored to minimize the on-state resistance while maintain-

ing superior switching performance.

Fast Switching Speed

Low Gate Charge

High Performance Trench Technology for Extremely Low

R_DS(on)

Applications

•

High Power and Current Handling Capability

RoHS Compliant

•

Synchronous Rectification for ATX / Server / Telecom PSU

Battery Protection Circuit

Motor Drives and Uninterruptible Power Supplies

Micro Solar Inverter

D²-PAK

(TO263)

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted

Symbol

V_DSS

V_GSS

Parameter

FDB110N15A

Unit

Drain to Source Voltage

Gate to Source Voltage

150

±20

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- Pulsed

I_D

Drain Current

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 3)

369

E_AS

dv/dt

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

365

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

234

P_D

Power Dissipation

1.56

-55 to +175

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Unit

FDB110N15A

0.64

R_θJC

R_θJA

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

^oC/W

62.5

FDB110N15A Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7...9

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