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FDB14N30TM PDF预览

FDB14N30TM

更新时间： 2024-11-16 11:14:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 1223K
描述
功率 MOSFET，N 沟道，UniFETTM，300 V，14 A，290 mΩ，D2PAK

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中文翻译

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FDB14N30TM 技术参数

是否无铅：不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.87
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：166954Samacsys Pin Count：4
Samacsys Part Category：Integrated CircuitSamacsys Package Category：TO-XXX (Inc. DPAK)
Samacsys Footprint Name：TO263(DDPAK)Samacsys Released Date：2015-04-13 16:42:46
Is Samacsys：N雪崩能效等级（Eas）：330 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：300 V最大漏极电流 (Abs) (ID)：14 A
最大漏极电流 (ID)：14 A最大漏源导通电阻：0.29 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：140 W最大脉冲漏极电流 (IDM)：56 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDB14N30TM 数据手册

 浏览型号FDB14N30TM的Datasheet PDF文件第2页浏览型号FDB14N30TM的Datasheet PDF文件第3页浏览型号FDB14N30TM的Datasheet PDF文件第4页浏览型号FDB14N30TM的Datasheet PDF文件第5页浏览型号FDB14N30TM的Datasheet PDF文件第6页浏览型号FDB14N30TM的Datasheet PDF文件第7页 
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