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FDB150N10

更新时间： 2024-11-16 11:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
10页 435K
描述
N 沟道，PowerTrench® MOSFET，100V，57A，15mΩ

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中文翻译

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FDB150N10 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：D2PAK-3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：1.53
Is Samacsys：N雪崩能效等级（Eas）：132 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：57 A
最大漏极电流 (ID)：57 A最大漏源导通电阻：0.015 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：110 W最大脉冲漏极电流 (IDM)：228 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDB150N10 数据手册

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中文翻译

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与FDB150N10相关器件

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 		15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET
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 		N-Channel SMPS Power MOSFET
FDB15N50 ONSEMI

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 		功率 MOSFET，N 沟道，UniFETTM，500 V，15 A，380 mΩ，D2P
FDB-15PF HRS

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FDB-15SF HRS

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 		FD TYPE CONNECTOR FOR RIBBON CABLE
FDB16AN08A0 FAIRCHILD

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 		N-Channel PowerTrench MOSFET 75V, 58A, 16mз
FDB16AN08A0 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，75 V，58 A，16 mΩ
FDB1D7N10CL7 ONSEMI

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 		功率 MOSFET，N 沟道，Standard Gate，100 V，268 A，1.7
FDB2001M TOKO

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 		DC-DC Regulated Power Supply Module, 2 Output, 1.4W, Hybrid
FDB2001S TOKO

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 		DC-DC Regulated Power Supply Module, 2 Output, 1.4W, Hybrid

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