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FDB15N50 PDF预览

FDB15N50

更新时间： 2024-11-16 11:14:11
品牌 Logo 应用领域
安森美 - ONSEMI PC开关脉冲晶体管
页数 文件大小 规格书
9页 628K
描述
功率 MOSFET，N 沟道，UniFETTM，500 V，15 A，380 mΩ，D2PAK

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中文翻译

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FDB15N50 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：5 weeks风险等级：1.53
Samacsys Confidence：4Samacsys Status：Released
Samacsys PartID：1713762Samacsys Pin Count：3
Samacsys Part Category：MOSFET (N-Channel)Samacsys Package Category：Other
Samacsys Footprint Name：D2PAK?3 (TO?263, 3?LEAD) CASE 418AJ ISSUE CSamacsys Released Date：2019-03-18 14:33:45
Is Samacsys：N雪崩能效等级（Eas）：760 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：500 V最大漏极电流 (Abs) (ID)：15 A
最大漏极电流 (ID)：15 A最大漏源导通电阻：0.38 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：300 W最大脉冲漏极电流 (IDM)：60 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDB15N50 数据手册

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