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FDB12N50TM PDF预览

FDB12N50TM

更新时间： 2024-11-16 11:14:07
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
10页 843K
描述
功率 MOSFET，N 沟道，UniFETTM，500 V，11.5 A，650 mΩ，D2PAK

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中文翻译

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FDB12N50TM 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.96
Is Samacsys：N雪崩能效等级（Eas）：456 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：500 V最大漏极电流 (Abs) (ID)：11.5 A
最大漏极电流 (ID)：11.5 A最大漏源导通电阻：0.65 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：165 W
最大脉冲漏极电流 (IDM)：46 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDB12N50TM 数据手册

 浏览型号FDB12N50TM的Datasheet PDF文件第2页浏览型号FDB12N50TM的Datasheet PDF文件第3页浏览型号FDB12N50TM的Datasheet PDF文件第4页浏览型号FDB12N50TM的Datasheet PDF文件第5页浏览型号FDB12N50TM的Datasheet PDF文件第6页浏览型号FDB12N50TM的Datasheet PDF文件第7页 
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FDB12N50UTM_12 FAIRCHILD

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 		N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω
FDB12N50UTM_WS ONSEMI

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FDB12N50UTM_WS FAIRCHILD

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 		N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 10A, 800mΩ, 2LD,TO263, SURFACE MOU
FDB13AN06A0 FAIRCHILD

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 		N-Channel PowerTrench MOSFET 60V, 62A, 13.5mohm
FDB13AN06A0 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，60V，62A，13.5mΩ
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