Datasheet > FDB12N50U_12

FDB12N50U_12

更新时间： 2024-11-15 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	354K
描述
N-Channel MOSFET, FRFET 500V, 10A, 0.8Î©

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FDB12N50U_12 数据手册

January 2012

UniFET^TM

FDB12N50U

N-Channel MOSFET, FRFET

500V, 10A, 0.8Ω

Features

Description

•

R_DS(on)= 0.65Ω ( Typ.)@ V_GS= 10V, I_D= 5A

Low gate charge ( Typ. 21nC)

Low Crss ( Typ. 11pF)

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advance technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

cient switching mode power supplies and active power factor

correction.

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS compliant

D²-PAK

TO-263AB

FDB Series

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

500

±30

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- Pulsed

I_D

Drain Current

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 1)

(Note 3)

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

456

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

16.5

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

165

P_D

Power Dissipation

1.33

-55 to +150

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Ratings

0.75

Units

R_θJC

R_θJA

^oC/W

62.5

FDB12N50U Rev.C0

www.fairchildsemi.com

12 3 4 5 6 7 8

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