Datasheet > FDB14AN06L_F085

FDB14AN06L_F085

更新时间： 2024-11-15 12:24:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	306K
描述
N-Channel PowerTrenchÂ® MOSFET 60V, 60A, 14.6mW

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FDB14AN06L_F085 数据手册

December 2010

FDB14AN06LA0_F085

N-Channel PowerTrench^®MOSFET

60V, 60A, 14.6mΩ

Features

Applications

•

r_DS(ON)= 12.8mΩ(Typ.), V_GS= 5V, I_D= 60A

Q_g(tot) = 24nC (Typ.), V_GS= 5V

Low Miller Charge

•

Motor / Body Load Control

ABS Systems

Powertrain Management

Injection Systems

Low Q_RRBody Diode

UIS Capability (Single Pulse and Repetitive Pulse)

Qualified to AEC Q101

DC-DC converters and Off-line UPS

Distributed Power Architectures and VRMs

Primary Switch for 12V and 24V systems

RoHS Compliant

Formerly developmental type 83557

GATE

DRAIN

SOURCE

TO-263AB

FDB SERIES

(FLANGE)

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Continuous (T_C= 25^oC, V_GS= 10V)

Continuous (T_C= 25^oC, V_GS= 5V)

Continuous (T_A= 25^oC, V_GS= 5V, R_θJA= 43^oC/W)

Pulsed

I_D

Figure 4

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

125

P_D

Derate above 25^oC

0.83

W/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 175

Thermal Characteristics

R_θJC

R_θJA

Maximum Thermal Resistance Junction to Case TO-263

1.2

^oC/W

Maximum Thermal Resistance Junction to Ambient TO-263, 1in²

copper pad area

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

Rev. C

FDB14AN06LA0_F085

12 3 4 5 6 7...11

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