FDB14N30TM

更新时间： 2024-11-15 03:36:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	372K
描述
300V N-Channel MOSFET

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数据手册

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FDB14N30TM 数据手册

February 2007

UniFET

FDB14N30

300V N-Channel MOSFET

Features

Description

•

14A, 300V, R_DS(on)= 0.29Ω @V_GS= 10 V

Low gate charge ( typical 18 nC)

Low C_rss( typical 17 pF)

Fast switching

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

100% avalanche tested

Improved dv/dt capability

D²-PAK

FDB Series

Absolute Maximum Ratings

Symbol

Parameter

FDB14N30

Unit

V_DSS

Drain-Source Voltage

Drain Current

300

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

8.4

(Note 1)

(Note 2)

I_DM

Drain Current

- Pulsed

±30

330

V_GSS

E_AS

I_AR

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

4.5

Power Dissipation

(T_C= 25°C)

140

- Derate above 25°C

1.12

W/°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

Thermal Characteristics

Symbol

Parameter

Min.

Max.

0.89

Unit

°C/W

R_θJC

R_θJA*

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

FDB14N30 Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

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