FDB13AN06A0_NL

更新时间： 2024-11-15 13:00:07

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FDB13AN06A0_NL 数据手册

July 2003

FDB13AN06A0 / FDP13AN06A0

N-Channel PowerTrench^®MOSFET

60V, 62A, 13.5mΩ

Features

Applications

•

r_DS(ON)= 11.5mΩ(Typ.), V_GS= 10V, I_D= 62A

Q_g(tot) = 22nC (Typ.), V_GS= 10V

Low Miller Charge

•

Motor / Body Load Control

ABS Systems

Powertrain Management

Low Q_RRBody Diode

Injection Systems

UIS Capability (Single Pulse and Repetitive Pulse)

Qualified to AEC Q101

DC-DC converters and Off-line UPS

Distributed Power Architectures and VRMs

Primary Switch for 12V and 24V systems

Formerly developmental type 82555

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

GATE

DRAIN

SOURCE

(FLANGE)

TO-220AB

TO-263AB

FDP SERIES

FDB SERIES

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (T_C= 25^oC, V_GS= 10V)

Continuous (T_C= 100^oC, V_GS= 10V)

Continuous (T_A= 25^oC, V_GS= 10V, R_θJA= 43^oC/W)

Pulsed

I_D

10.9

Figure 4

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

115

P_D

Derate above 25^oC

0.77

W/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case TO-220,TO-263

1.3

^oC/W

Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2)

Thermal Resistance Junction to Ambient TO-263, 1in²copper pad area

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

FDB13AN06A0 / FDP13AN06A0 Rev. A1

12 3 4 5 6 7...11

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