Datasheet > FDB12N50

FDB12N50

更新时间： 2024-11-15 03:36:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	367K
描述
N-Channel MOSFET 500V, 11.5A, 0.65ヘ

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FDB12N50 数据手册

June 2007

UniFET

FDB12N50TM

N-Channel MOSFET

500V, 11.5A, 0.65Ω

Features

Description

•

R_DS(on)= 0.55Ω ( Typ.)@ V_GS= 10V, I_D= 6A

Low gate charge ( Typ. 22nC)

Low Crss ( Typ. 12pF)

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS compliant

D²-PAK

FDB Series

I²-PAK

FDI Series

G D S

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted

Symbol

V_DSS

V_GSS

Parameter

Ratings

500

Units

Drain to Source Voltage

Gate to Source Voltage

±30

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- P uls ed

11.5

I_D

Drain Current

6.9

I_DM

D rai n Cur rent

(Note 1)

(Note 2)

(Note 1)

(Note 3)

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

456

11.5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

16.7

4.5

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

165

P_D

Power Dissipation

1.33

-55 to +150

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Ratings

0.75

Units

R_θJC

Thermal Resistance, Junction to Case

R_θJA

Thermal Resistance, Junction to Ambient*

Thermal Resistance, Junction to Ambient

^oC/W

62.5

*When mounted on the minimum pad size recommended (PCB Mount)

FDB12N50TM Rev. A1

www.fairchildsemi.com

12 3 4 5 6 7...9

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