Datasheet > FCD600N65S3R0

FCD600N65S3R0

更新时间： 2024-11-03 11:14:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	447K
描述
功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，6 A，600 mΩ，DPAK

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FCD600N65S3R0 数据手册

FCD600N65S3R0

MOSFET – Power, N-Channel,

SUPERFET III, Easy Drive

650 V, 6 A, 600 mW

Description

www.onsemi.com

SUPERFET III MOSFET is ON Semiconductor’s brand-new high

voltage super-junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on-resistance and lower gate

charge performance. This advanced technology is tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate.

MAX

I MAX

DSS

DS(ON)

650 V

600 mW @ 10 V

6 A

Consequently, SUPERFET III MOSFET Easy drive series helps

manage EMI issues and allows for easier design implementation.

Features

• 700 V @ T = 150°C

• Typ. R

= 493 mW

DS(on)

• Ultra Low Gate Charge (Typ. Q = 11 nC)

• Low Effective Output Capacitance (Typ. C

• 100% Avalanche Tested

= 127 pF)

N-Channel MOSFET

oss(eff.)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

D−PAK

TO−252

CASE 369AS

• Computing / Display Power Supplies

• Telecom / Server Power Supplies

• Industrial Power Supplies

MARKING DIAGRAM

• Lighting / Charger / Adapter

$Y&Z&3&K

FCD600

N65S3R0

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FCD600N65S3R0 = Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

August, 2019 − Rev. 4

FCD600N65S3R0/D

12 3 4 5 6 7...10

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