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FCD850N80Z PDF预览

FCD850N80Z

更新时间： 2024-11-03 11:14:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
12页 1731K
描述
功率 MOSFET，N 沟道，SUPERFET® II，800 V，6 A，850 mΩ，DPAK

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中文翻译

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FCD850N80Z 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：DPAK-3/2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：13 weeks风险等级：1
雪崩能效等级（Eas）：114 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：800 V
最大漏极电流 (Abs) (ID)：6 A最大漏极电流 (ID)：6 A
最大漏源导通电阻：0.85 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：245极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：75 W最大脉冲漏极电流 (IDM)：18 A
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON最大关闭时间（toff）：109 ns
最大开启时间（吨）：72 ns

FCD850N80Z 数据手册

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