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FCD900N60Z

更新时间： 2024-11-03 01:21:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 614K
描述
FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 mΩ

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December 2013  
FCD900N60Z  
N-Channel SuperFET II MOSFET  
®
600 V, 4.5 A, 900 mΩ  
Features  
Description  
•
•
•
•
•
•
•
650 V @ TJ = 150°C  
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new  
high voltage super-junction (SJ) MOSFET family that is utilizing  
charge balance technology for outstanding low on-resistance  
and lower gate charge performance. This technology is tailored  
to minimize conduction loss, provide superior switching perfor-  
mance, dv/dt rate and higher avalanche energy. Consequently,  
SuperFET II MOSFET is very suitable for the switching power  
applications such as PFC, server/telecom power, FPD TV  
power, ATX power and industrial power applications.  
Typ. RDS(on) = 820 mΩ  
Ultra Low Gate Charge (Typ. Qg = 13 nC)  
Low Effective Output Capacitance (Typ. Coss(eff.) = 49 pF)  
100% Avalanche Tested  
ESD Improved Capacity  
RoHS Compliant  
Applications  
•
•
•
LCD / LED / PDP TV and Monitor Lighting  
Solar Inverter  
Charger  
D
D
G
S
G
D-PAK  
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.  
Symbol  
VDSS  
Parameter  
FCD900N60Z  
Unit  
V
Drain to Source Voltage  
Gate to Source Voltage  
600  
±20  
- DC  
V
VGSS  
ID  
- AC  
(f > 1Hz)  
±30  
V
- Continuous (TC = 25oC)  
- Continuous (TC = 100oC)  
- Pulsed  
4.5  
Drain Current  
A
3.5  
IDM  
EAS  
IAR  
Drain Current  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 1)  
13.5  
47.5  
1
A
mJ  
A
Single Pulsed Avalanche Energy  
Avalanche Current  
EAR  
Repetitive Avalanche Energy  
MOSFET dv/dt  
0.52  
100  
mJ  
dv/dt  
PD  
V/ns  
Peak Diode Recovery dv/dt  
(Note 3)  
20  
(TC = 25oC)  
- Derate Above 25oC  
52  
W
W/oC  
oC  
Power Dissipation  
0.42  
-55 to +150  
300  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds  
oC  
Thermal Characteristics  
Symbol  
Parameter  
Unit  
oC/W  
oC/W  
FCD900N60Z  
RθJC  
RθJA  
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Junction to Ambient, Max.  
2.4  
100  
www.fairchildsemi.com  
©2012 Fairchild Semiconductor Corporation  
FCD900N60Z Rev. C3  
1
1234567...9

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