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FCD9N60NTM PDF预览

FCD9N60NTM

更新时间: 2024-11-02 11:59:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 784K
描述
N-Channel MOSFET

FCD9N60NTM 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:DPAK
包装说明:ROHS COMPLIANT, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.87
Is Samacsys:N雪崩能效等级(Eas):135 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):9 A
最大漏极电流 (ID):9 A最大漏源导通电阻:0.385 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):92.6 W最大脉冲漏极电流 (IDM):27 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FCD9N60NTM 数据手册

 浏览型号FCD9N60NTM的Datasheet PDF文件第2页浏览型号FCD9N60NTM的Datasheet PDF文件第3页浏览型号FCD9N60NTM的Datasheet PDF文件第4页浏览型号FCD9N60NTM的Datasheet PDF文件第5页浏览型号FCD9N60NTM的Datasheet PDF文件第6页浏览型号FCD9N60NTM的Datasheet PDF文件第7页 
February 2010  
SupreMOSTM  
FCD9N60NTM  
N-Channel MOSFET  
600V, 9A, 0.385mΩ  
Features  
Description  
RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A  
Ultra Low Gate Charge (Typ.Qg = 17.8nC)  
Low Effective Output Capacitance  
100% Avalanche Tested  
The SupreMOS MOSFET, Fairchild’s next generation of high  
voltage super-junction MOSFETs, employs a deep trench filling  
process that differentiates it from preceding multi-epi based tech-  
nologies. By utilizing this advance technology and precise process  
control, SupreMOS provide world class Rsp, superior switching  
performance and ruggedness.  
RoHS Compliant  
This SupreMOS MOSFET fits the industry’s AC-DC SMPS  
requirements for PFC, server/telecom power, FPD TV power,  
ATX power, and industrial power applications.  
D
D
G
S
G
D-PAK  
(TO-252)  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted  
Symbol  
VDSS  
VGSS  
Parameter  
FCD9N60N  
600  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
±30  
-Continuous (TC = 25oC)  
-Continuous (TC = 100oC)  
9.0  
ID  
Drain Current  
A
5.7  
IDM  
EAS  
IAR  
Drain Current  
- Pulsed  
(Note 1)  
27  
A
mJ  
A
Single Pulsed Avalanche Energy  
Avalanche Current  
(Note 2)  
135  
9.0  
EAR  
Repetitive Avalanche Energy  
MOSFET dv/dt Ruggedness  
Peak Diode Recovery dv/dt  
9.3  
mJ  
100  
dv/dt  
PD  
V/ns  
(Note 3)  
15  
(TC = 25oC)  
- Derate above 25oC  
92.6  
0.74  
-55 to +150  
W
W/oC  
oC  
Power Dissipation  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
RθJC  
RθJA  
Parameter  
FCD9N60N  
1.35  
Units  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
oC/W  
62.5  
©20010 Fairchild Semiconductor Corporation  
FCD9N60NTM Rev. A  
1
www.fairchildsemi.com  

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