5秒后页面跳转
捷配首页

Datasheet > FCD900N60ZCT-ND
FCD900N60ZCT-ND PDF预览

FCD900N60ZCT-ND

更新时间： 2024-11-03 01:21:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 614K
描述
FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 mΩ

阅读下载

中文翻译

获取价格

FCD900N60ZCT-ND 数据手册

 浏览型号FCD900N60ZCT-ND的Datasheet PDF文件第2页浏览型号FCD900N60ZCT-ND的Datasheet PDF文件第3页浏览型号FCD900N60ZCT-ND的Datasheet PDF文件第4页浏览型号FCD900N60ZCT-ND的Datasheet PDF文件第5页浏览型号FCD900N60ZCT-ND的Datasheet PDF文件第6页浏览型号FCD900N60ZCT-ND的Datasheet PDF文件第7页 
December 2013  
FCD900N60Z  
N-Channel SuperFET II MOSFET  
®
600 V, 4.5 A, 900 mΩ  
Features  
Description  
•
•
•
•
•
•
•
650 V @ TJ = 150°C  
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new  
high voltage super-junction (SJ) MOSFET family that is utilizing  
charge balance technology for outstanding low on-resistance  
and lower gate charge performance. This technology is tailored  
to minimize conduction loss, provide superior switching perfor-  
mance, dv/dt rate and higher avalanche energy. Consequently,  
SuperFET II MOSFET is very suitable for the switching power  
applications such as PFC, server/telecom power, FPD TV  
power, ATX power and industrial power applications.  
Typ. RDS(on) = 820 mΩ  
Ultra Low Gate Charge (Typ. Qg = 13 nC)  
Low Effective Output Capacitance (Typ. Coss(eff.) = 49 pF)  
100% Avalanche Tested  
ESD Improved Capacity  
RoHS Compliant  
Applications  
•
•
•
LCD / LED / PDP TV and Monitor Lighting  
Solar Inverter  
Charger  
D
D
G
S
G
D-PAK  
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.  
Symbol  
VDSS  
Parameter  
FCD900N60Z  
Unit  
V
Drain to Source Voltage  
Gate to Source Voltage  
600  
±20  
- DC  
V
VGSS  
ID  
- AC  
(f > 1Hz)  
±30  
V
- Continuous (TC = 25oC)  
- Continuous (TC = 100oC)  
- Pulsed  
4.5  
Drain Current  
A
3.5  
IDM  
EAS  
IAR  
Drain Current  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 1)  
13.5  
47.5  
1
A
mJ  
A
Single Pulsed Avalanche Energy  
Avalanche Current  
EAR  
Repetitive Avalanche Energy  
MOSFET dv/dt  
0.52  
100  
mJ  
dv/dt  
PD  
V/ns  
Peak Diode Recovery dv/dt  
(Note 3)  
20  
(TC = 25oC)  
- Derate Above 25oC  
52  
W
W/oC  
oC  
Power Dissipation  
0.42  
-55 to +150  
300  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds  
oC  
Thermal Characteristics  
Symbol  
Parameter  
Unit  
oC/W  
oC/W  
FCD900N60Z  
RθJC  
RθJA  
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Junction to Ambient, Max.  
2.4  
100  
www.fairchildsemi.com  
©2012 Fairchild Semiconductor Corporation  
FCD900N60Z Rev. C3  
1
1234567...9

中文翻译

下载PDF

与FCD900N60ZCT-ND相关器件

型号 品牌 获取价格 描述 数据表
FCD9N60N FAIRCHILD

获取价格

 		N-Channel MOSFET
FCD9N60NTM FAIRCHILD

获取价格

 		N-Channel MOSFET
FCD9N60NTM ONSEMI

获取价格

 		功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，9 A，385 m
FCDM082B0237/02.5 IVO

获取价格

 		Through Beam Photoelectric Sensor, 237.5mm Max, Rectangular, Panel Mount
FCDM082B0477/02.5 IVO

获取价格

 		Through Beam Photoelectric Sensor, 477.5mm Max, Rectangular, Panel Mount
FCDM082B0717/02.5 IVO

获取价格

 		Through Beam Photoelectric Sensor, 717.5mm Max, Rectangular, Panel Mount
FCDM082B0957/02.5 IVO

获取价格

 		Through Beam Photoelectric Sensor, 957.5mm Max, Rectangular, Panel Mount
FCDM082B1197/02.5 IVO

获取价格

 		Through Beam Photoelectric Sensor, 1197.5mm Max, Rectangular, Panel Mount
FCDM082B1677/02.5 IVO

获取价格

 		Through Beam Photoelectric Sensor, 1677.5mm Max, Rectangular, Panel Mount
FCDM082I0237/02.5 IVO

获取价格

 		Through Beam Photoelectric Sensor, 237.5mm Max, Rectangular, Panel Mount

与FCD900N60ZCT-ND相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证