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FCD7N60TM PDF预览

FCD7N60TM

更新时间: 2024-11-02 03:28:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 1081K
描述
600V N-Channel MOSFET

FCD7N60TM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:ROHS COMPLIANT, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.84
雪崩能效等级(Eas):230 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):7 A
最大漏源导通电阻:0.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):83 W
最大脉冲漏极电流 (IDM):21 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FCD7N60TM 数据手册

 浏览型号FCD7N60TM的Datasheet PDF文件第2页浏览型号FCD7N60TM的Datasheet PDF文件第3页浏览型号FCD7N60TM的Datasheet PDF文件第4页浏览型号FCD7N60TM的Datasheet PDF文件第5页浏览型号FCD7N60TM的Datasheet PDF文件第6页浏览型号FCD7N60TM的Datasheet PDF文件第7页 
July 2006  
TM  
SuperFET  
FCD7N60 / FCU7N60  
600V N-Channel MOSFET  
Features  
Description  
650V @TJ = 150°C  
SuperFETTM is, Farichild’s proprietary, new generation of high  
voltage MOSFET family that is utilizing an advanced charge  
balance mechanism for outstanding low on-resistance and  
lower gate charge performance.  
Typ. Rds(on)=0.53Ω  
Ultra low gate charge (typ. Qg=23nC)  
Low effective output capacitance (typ. Coss.eff=60pF)  
100% avalanche tested  
This advanced technology has been tailored to minimize  
conduction loss, provide superior switching performance, and  
withstand extreme dv/dt rate and higher avalanche energy.  
Consequently, SuperFET is very suitable for various AC/DC  
power conversion in switching mode operation for system  
miniaturization and higher efficiency.  
D
D
G
D-PAK  
FCD Series  
G D S  
I-PAK  
FCU Series  
G
S
S
Absolute Maximum Ratings  
Symbol  
Parameter  
FCD7N60/FCU7N60  
Unit  
VDSS  
Drain-Source Voltage  
Drain Current  
600  
V
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
7
4.4  
A
A
(Note 1)  
(Note 2)  
IDM  
Drain Current  
- Pulsed  
A
21  
± 30  
230  
7
VGSS  
EAS  
IAR  
Gate-Source voltage  
V
mJ  
A
Single Pulsed Avalanche Energy  
Avalanche Current  
(Note 1)  
(Note 1)  
(Note 3)  
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
8.3  
20  
mJ  
V/ns  
Power Dissipation  
(TC = 25°C)  
83  
W
- Derate above 25°C  
0.67  
W/°C  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
300  
°C  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
°C  
Thermal Characteristics  
Symbol  
Parameter  
FCD7N60/FCU7N60  
Unit  
°C/W  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
1.5  
83  
©2006 Fairchild Semiconductor Corporation  
FCD7N60/FCU7N60 Rev. A0  
1
www.fairchildsemi.com  

FCD7N60TM 替代型号

型号 品牌 替代类型 描述 数据表
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