Datasheet > FCD7N60

FCD7N60

更新时间： 2024-11-02 03:28:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	1081K
描述
600V N-Channel MOSFET

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FCD7N60 数据手册

July 2006

SuperFET

FCD7N60 / FCU7N60

600V N-Channel MOSFET

Features

Description

•

650V @T_J= 150°C

SuperFET^TMis, Farichild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

Typ. Rds(on)=0.53Ω

Ultra low gate charge (typ. Qg=23nC)

Low effective output capacitance (typ. Coss.eff=60pF)

100% avalanche tested

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

D-PAK

FCD Series

G D S

I-PAK

FCU Series

Absolute Maximum Ratings

Symbol

Parameter

FCD7N60/FCU7N60

Unit

V_DSS

Drain-Source Voltage

Drain Current

600

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

4.4

(Note 1)

(Note 2)

I_DM

Drain Current

- Pulsed

± 30

230

V_GSS

E_AS

I_AR

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

8.3

V/ns

Power Dissipation

(T_C= 25°C)

- Derate above 25°C

0.67

W/°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

Thermal Characteristics

Symbol

Parameter

FCD7N60/FCU7N60

Unit

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

1.5

FCD7N60/FCU7N60 Rev. A0

www.fairchildsemi.com

12 3 4 5 6 7...9

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