Datasheet > EMH2_12

EMH2_12

更新时间： 2024-11-14 12:52:35

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
8页	482K
描述
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

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中文翻译

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EMH2_12 数据手册

EMH2 / UMH2N / IMH2A

Datasheet

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

lOutline

EMT6

UMT6

Parameter

V_CC

Tr1 and Tr2

50V

(6)

(5)

(4)

(6)

(5)

(4)

(1)

I_C(MAX.)

R₁

100mA

47kW

(2)

(3)

EMH2

(SC-107C)

UMH2N

SOT-353 (SC-88)

R₂

SMT6

(4)

(5)

lFeatures

(6)

1) Built-In Biasing Resistors, R₁= R₂= 47kW.

(3)

(2)

2) Two DTC144E chips in one package.

(1)

3) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see inner circuit).

IMH2A

SOT-457 (SC-74)

4) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

lInner circuit

of the input. They also have the advantage of

completely eliminating parasitic effects.

5) Only the on/off conditions need to be set for

operation, making the circuit design easy.

6) Lead Free/RoHS Compliant.

EMH2 / UMH2N

IMH2A

OUT

GND

OUT

(4)

(5)

GND

(6)

(5)

(4)

lApplication

(1)

GND

(2)

(3)

OUT

(3)

GND

(2)

(1)

OUT

Inverter circuit, Interface circuit, Driver circuit

lPackaging specifications

Package

size

(mm)

Basic

ordering

unit (pcs)

Taping

code

Reel size Tape width

Part No.

Package

Marking

(mm)

EMH2

EMT6

UMT6

SMT6

1616

2021

2928

T2R

180

8,000

UMH2N

IMH2A

3,000

T108

3,000

www.rohm.com

2012.06 - Rev.C

1/7

12 3 4 5 6 7 8

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