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EMH2411R

更新时间： 2024-11-14 06:57:07
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
4页 271K
描述
General-Purpose Switching Device Applications

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中文翻译

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EMH2411R 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.37
Is Samacsys：N外壳连接：DRAIN
配置：COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：5 A最大漏极电流 (ID)：5 A
最大漏源导通电阻：0.038 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F8元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：1.4 W
最大脉冲漏极电流 (IDM)：60 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

EMH2411R 数据手册

 浏览型号EMH2411R的Datasheet PDF文件第2页浏览型号EMH2411R的Datasheet PDF文件第3页浏览型号EMH2411R的Datasheet PDF文件第4页 
Ordering number : ENA1421  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
EMH2411R  
Features  
•
Low ON-resistance.  
•
Best suited for LiB charging and discharging switch.  
Common-drain type.  
2.5V drive.  
•
•
•
Halogen free compliance.  
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
30  
±12  
5
DSS  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Total Dissipation  
I
PW 10 s, duty cycle 1%  
When mounted on ceramic substrate (900mm2 0.8mm) 1unit  
When mounted on ceramic substrate (900mm2 0.8mm)  
60  
A
≤
μ
≤
DP  
P
P
1.3  
1.4  
150  
W
W
°C  
°C  
×
D
T
×
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
--55 to +150  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
D GS  
30  
V
μA  
μA  
V
(BR)DSS  
I
I
V
V
V
V
=30V, V =0V  
GS  
1
±10  
1.3  
DSS  
DS  
GS  
DS  
DS  
=±8V, V =0V  
DS  
GSS  
V
(off)  
GS  
=10V, I =1mA  
0.5  
3
D
Forward Transfer Admittance  
| yfs |  
=10V, I =3A  
5
S
D
Marking : LL  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not  
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for applications outside the standard  
applications of our customer who is considering such use and/or outside the scope of our intended standard  
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the  
intended use, our customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
www.semiconductor-sanyo.com/network  
No. A1421-1/4  
52709PE MS IM TC-00001977  
1234

中文翻译

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