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EMH2602

更新时间： 2024-09-28 03:34:19
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三洋 - SANYO 开关通用开关
页数 文件大小 规格书
6页 68K
描述
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

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EMH2602 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.38
Is Samacsys：N配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：3.5 A
最大漏极电流 (ID)：3.5 A最大漏源导通电阻：0.069 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F8
元件数量：2端子数量：8
工作模式：DEPLETION MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：1.2 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

EMH2602 数据手册

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Ordering number : EN8732A  
SANYO Sem iconductors  
DATA S HEET  
N-Channel and P-Channel Silicon MOSFETs  
General-Purpose Switching Device  
Applications  
EMH2602  
Features  
• The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and  
ultrahigh-speed switching, thereby enabling high-density mounting.  
• 4V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
N-channel  
30  
P-channel  
--30  
Unit  
V
V
DSS  
GSS  
V
±20  
3.5  
14  
±20  
--2  
V
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Total Dissipation  
I
PW≤10µs, duty cycle≤1%  
--8  
A
DP  
P
D
Mounted on a ceramic board (900mm2✕0.8mm) 1unit  
Mounted on a ceramic board (900mm2✕0.8mm)  
1.0  
1.2  
150  
W
W
°C  
°C  
P
T
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
[N-channel]  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
30  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=30V, V =0V  
GS  
1
DSS  
DS  
GS  
DS  
DS  
I
=±16V, V =0V  
DS  
±10  
GSS  
V
(off)  
GS  
=10V, I =1mA  
1.2  
1.5  
2.6  
D
Forward Transfer Admittance  
yfs  
=10V, I =2A  
2.6  
53  
S
D
R
(on)1  
I
D
I
D
=2A, V =10V  
GS  
69  
mΩ  
mΩ  
DS  
Static Drain-to-Source On-State Resistance  
R
(on)2  
=1A, V =4V  
GS  
105  
150  
DS  
Marking : FB  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
51607 TI IM TC-00000713 / O0406PA MS IM TC-00000044  
No.8732-1/6  
123456

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