生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F8 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
配置: | SEPARATE, 2 ELEMENTS | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 4 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F8 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EMH2604-TL-H | ONSEMI |
获取价格 |
Pch+Nch Power MOSFET, 20V, 4A, 45mΩ, -20V, -3 | |
EMH2801 | SANYO |
获取价格 |
SBD : Schottky Barrier Diode General-Purpose Switching Device Applications | |
EMH2CM100GB0D00* | AISHI |
获取价格 |
Electrolytic SMD | |
EMH2CM101WM5D00* | AISHI |
获取价格 |
Electrolytic SMD | |
EMH2CM150FD0D00* | AISHI |
获取价格 |
Electrolytic SMD | |
EMH2CM1R8E90D00T^ | AISHI |
获取价格 |
Electrolytic SMD | |
EMH2CM220FH0D00T^ | AISHI |
获取价格 |
Electrolytic SMD | |
EMH2CM220GD0D00* | AISHI |
获取价格 |
Electrolytic SMD | |
EMH2CM330GE0D00* | AISHI |
获取价格 |
Electrolytic SMD | |
EMH2CM470GH0D00* | AISHI |
获取价格 |
Electrolytic SMD |