Datasheet > 晶体管 > 功率场效应晶体管> EMH2412-TL-H

EMH2412-TL-H

更新时间： 2024-11-14 12:34:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	550K
描述
N-Channel Power MOSFET

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中文翻译

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技术参数
数据手册

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EMH2412-TL-H 技术参数

是否无铅：	不含铅	生命周期：	Lifetime Buy
针数：	8	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	Factory Lead Time：	1 week
风险等级：	5.29	JESD-609代码：	e6
湿度敏感等级：	1	端子面层：	Tin/Bismuth (Sn/Bi)
Base Number Matches：	1

EMH2412-TL-H 数据手册

Ordering number : ENA1315A

EMH2412

N-Channel Power MOSFET

http://onsemi.com

24V, 6A, 27m , Dual EMH8

Features

•

Low ON-resistance

•

Best suited for LiB charging and discharging switch

•

Common-drain type

•

2.5V drive

•

Halogen free compliance

•

Protection diode in

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

DSS

±12

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

PW 10 s, duty cycle 1%

When mounted on ceramic substrate (900mm²0.8mm) 1unit

When mounted on ceramic substrate (900mm²0.8mm)

1.3

≤

°C

1.4

Channel Temperature

Storage Temperature

Tch

150

Tstg

--55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: EMH8

7045-006

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

EMH2412-TL-H

0.2

0.125

Taping Type : TL

Marking

LOT No.

0.5

2.0

Electrical Connection

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain

6 : Drain

7 : Drain

8 : Drain

EMH8

Semiconductor Components Industries, LLC, 2013

July, 2013

53012 TKIM/91008PE TI IM TC-00001579 No. A1315-1/7

12 3 4 5 6 7

中文翻译

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