Datasheet > EMH2418R

EMH2418R

更新时间： 2024-09-30 01:21:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	335K
描述
N-Channel Power MOSFET

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数据手册

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EMH2418R 数据手册

Ordering number : ENA2267A

EMH2418R

N-Channel Power MOSFET

24V, 9A, 15mΩ, Dual EMH8

http://onsemi.com

Electrical Connection

N-channel

Features

 Low On-resistance

2.5V drive

 Common-Drain Type

 Protection diode in

 Built-in gate protection resistor

 Best suited for LiB charging and discharging switch

Halogen free compliance

Specifications

Absolute Maximum Ratings at Ta = 25C

Parameter

Symbol

Value

Unit

Drain to Source Voltage

DSS

GSS

12

Gate to Source Voltage

Drain Current (DC)

Marking

Drain Current (Pulse)

PW10s, duty cycle1%

Power Dissipation

1.3

1.4

LOT No.

When mounted on ceramic substrate(900mm²0.8mm) 1unit

Total Dissipation

When mounted on ceramic substrate(900mm²0.8mm)

150

C

JunctionTemperature

Packing Type:TL

Tstg

- 55 to

+150

Storage Temperature

Thermal Resistance Ratings

Parameter

Symbol

Value

Unit

Junction to Ambient

JA

C/W

When mounted on ceramic substrate(900mm²0.8mm)

Ordering & Package Information

Device

Package

Shipping

EMH2418R-TL-H

Pb-free and

Halogen Free

3,000

EMH8

pcs. / reel

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Semiconductor Components Industries, LLC, 2014

February, 2014

21314HK TC-00003090/D1813HK PE No. A2267-1/6

12 3 4 5 6

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