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EMH2407_12 PDF预览

EMH2407_12

更新时间: 2024-11-14 12:51:15
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
7页 508K
描述
General-Purpose Switching Device Applications

EMH2407_12 数据手册

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Ordering number : ENA1141D  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFETs  
General-Purpose Switching Device  
Applications  
EMH2407  
Features  
Low ON-resistance  
Best suited for LiB charging and discharging switch  
Common-drain type  
2.5V drive  
Protection diode in  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
20  
±12  
6
DSS  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Total Dissipation  
I
PW 10 s, duty cycle 1%  
When mounted on ceramic substrate (900mm2 0.8mm) 1unit  
When mounted on ceramic substrate (900mm2 0.8mm)  
40  
A
μ
DP  
P
P
1.3  
1.4  
150  
W
W
°C  
°C  
×
D
T
×
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
--55 to +150  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: EMH8  
7045-006  
• JEITA, JEDEC  
: -  
• Minimum Packing Quantity : 3,000 pcs./reel  
0.2  
0.125  
EMH2407-TL-H  
8
5
Packing Type : TL  
Marking  
LG  
TL  
1
4
LOT No.  
0.5  
2.0  
1 : Source1  
2 : Gate1  
3 : Source2  
4 : Gate2  
5 : Drain  
Electrical Connection  
8
7
6
5
6 : Drain  
7 : Drain  
8 : Drain  
SANYO : EMH8  
1
2
3
4
http://www.sanyosemi.com/en/network/  
91212 TKIM/51612 TKIM/90308 TIIM/80608 TIIM/31908PE TIIM TC-00001276  
No. A1141-1/7  

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