Datasheet > EMH2409-TL-H

EMH2409-TL-H

更新时间： 2024-11-14 20:57:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	558K
描述
N-Channel Power MOSFET, 30V, 4A, 59mΩ, Dual EMH8, SOT-383FL / EMH8, 3000-REEL

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中文翻译

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技术参数
数据手册

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EMH2409-TL-H 技术参数

是否无铅：	不含铅	生命周期：	Lifetime Buy
针数：	8	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	风险等级：	5.27
JESD-609代码：	e6	湿度敏感等级：	1
端子面层：	Tin/Bismuth (Sn/Bi)	Base Number Matches：	1

EMH2409-TL-H 数据手册

Ordering number : ENA1890A

EMH2409

N-Channel Power MOSFET

http://onsemi.com

30V, 4A, 59m , Dual EMH8

Features

•

The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,

thereby enabling high-density mounting

4V drive

Halogen free compliance

Protection diode in

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

±20

DSS

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

PW 10 s, duty cycle 1%

When mounted on ceramic substrate (900mm²0.8mm) 1unit

When mounted on ceramic substrate (900mm²0.8mm)

≤

1.0

1.2

150

°C

Channel Temperature

Storage Temperature

Tch

Tstg

--55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: EMH8

7045-006

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

EMH2409-TL-H

0.2

0.125

Packing Type : TL

Marking

Lot No.

0.5

2.0

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

Electrical Connection

EMH8

Semiconductor Components Industries, LLC, 2013

July, 2013

62712 TKIM/D1510PE TKIM TC-00002532 No. A1890-1/7

12 3 4 5 6 7

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