Datasheet > EMH2407RTL

EMH2407RTL

更新时间： 2024-11-15 05:14:07

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲光电二极管晶体管
页数	文件大小	规格书
4页	315K
描述
Power Field-Effect Transistor, 6A I(D), 20V, 0.023ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, EMH8, 8 PIN

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EMH2407RTL 数据手册

EMH2407R

Ordering number : ENA1484

SANYO Sem iconductors

DATA S HEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

EMH2407R

Features

•

ON-resistance R (on)1 : 16m (typ.)

Best suited for LiB charging and discharging switch

2.5V drive

Common-drain type

Halogen free compliance

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

±12

DSS

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

PW 10 s, duty cycle 1%

When mounted on ceramic substrate (900mm²0.8mm) 1unit

When mounted on ceramic substrate (900mm²0.8mm)

≤

1.3

1.4

150

°C

Channel Temperature

Storage Temperature

Tch

Tstg

--55 to +150

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: EMH8

7045-006

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

0.2

0.125

Taping Type : TL

Marking

Lot No.

0.5

2.0

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain

Electrical Connection

6 : Drain

7 : Drain

8 : Drain

SANYO : EMH8

http://semicon.sanyo.com/en/network

No. A1484-1/4

42810PE TK IM TC-00002344

12 3 4

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